[9464PC Stock]
- Nimewo Pati:
- IXGR35N120C
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 1200V 70A 200W ISOPLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in IXYS IXGR35N120C electronic components. IXGR35N120C can be shipped within 24 hours after order. If you have any demands for IXGR35N120C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXGR35N120C Atribi pwodwi yo
Nimewo Pati :
IXGR35N120C
Manifakti :
IXYS
Deskripsyon :
IGBT 1200V 70A 200W ISOPLUS247
Seri :
HiPerFAST™
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
70A
Kouran - Pèseptè batman (Icm) :
140A
Vce (sou) (Max) @ Vge, Ic :
4V @ 15V, 35A
Pouvwa - Max :
200W
Oblije chanje enèji :
3mJ (off)
Kalite Antre :
Standard
Gate chaje :
170nC
Td (on / off) @ 25 ° C :
50ns/150ns
Kondisyon egzamen an :
960V, 35A, 4.7 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
ISOPLUS247™
Pake Aparèy Founisè :
ISOPLUS247™
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