IXYS - IXGP20N120BD1

KEY Part #: K6421813

IXGP20N120BD1 Pricing (USD) [19693PC Stock]

  • 1 pcs$2.20336
  • 50 pcs$2.19239

Nimewo Pati:
IXGP20N120BD1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 1200V 40A 190W TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in IXYS IXGP20N120BD1 electronic components. IXGP20N120BD1 can be shipped within 24 hours after order. If you have any demands for IXGP20N120BD1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXGP20N120BD1 Atribi pwodwi yo

Nimewo Pati : IXGP20N120BD1
Manifakti : IXYS
Deskripsyon : IGBT 1200V 40A 190W TO220
Seri : -
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 40A
Kouran - Pèseptè batman (Icm) : 100A
Vce (sou) (Max) @ Vge, Ic : 3.4V @ 15V, 20A
Pouvwa - Max : 190W
Oblije chanje enèji : 2.1mJ (off)
Kalite Antre : Standard
Gate chaje : 72nC
Td (on / off) @ 25 ° C : 25ns/150ns
Kondisyon egzamen an : 960V, 20A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 40ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB