Infineon Technologies - IPA60R360P7XKSA1

KEY Part #: K6418040

IPA60R360P7XKSA1 Pricing (USD) [49745PC Stock]

  • 1 pcs$0.74840
  • 10 pcs$0.67440
  • 100 pcs$0.54194
  • 500 pcs$0.42149
  • 1,000 pcs$0.33036

Nimewo Pati:
IPA60R360P7XKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CHANNEL 650V 9A TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Single, Diodes - RF, Transistors - Bipolè (BJT) - Arrays and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPA60R360P7XKSA1 electronic components. IPA60R360P7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPA60R360P7XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA60R360P7XKSA1 Atribi pwodwi yo

Nimewo Pati : IPA60R360P7XKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CHANNEL 650V 9A TO220
Seri : CoolMOS™ P7
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 360 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id : 4V @ 140µA
Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 555pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 22W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220 Full Pack
Pake / Ka : TO-220-3 Full Pack