TK7S10N1Z,LQ Pricing (USD) [171284PC Stock]
- 1 pcs$0.23872
- 2,000 pcs$0.23754
- Nimewo Pati:
- TK7S10N1Z,LQ
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 100V 7A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Transistors - JFETs, Diodes - Rèkteur - Arrays and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK7S10N1Z,LQ electronic components. TK7S10N1Z,LQ can be shipped within 24 hours after order. If you have any demands for TK7S10N1Z,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK7S10N1Z,LQ Atribi pwodwi yo
Nimewo Pati :
TK7S10N1Z,LQ
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 100V 7A DPAK
Seri :
U-MOSVIII-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
48 mOhm @ 3.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
7.1nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
470pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
50W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK+
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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