Diodes Incorporated - ZXMN2AM832TA

KEY Part #: K6523106

ZXMN2AM832TA Pricing (USD) [212335PC Stock]

  • 1 pcs$0.17419
  • 3,000 pcs$0.08429

Nimewo Pati:
ZXMN2AM832TA
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET 2N-CH 20V 2.9A 8MLP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN2AM832TA Atribi pwodwi yo

Nimewo Pati : ZXMN2AM832TA
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET 2N-CH 20V 2.9A 8MLP
Seri : -
Estati Pati : Obsolete
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.9A
RD sou (Max) @ Id, Vgs : 120 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id : 700mV @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs : 3.1nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 299pF @ 15V
Pouvwa - Max : 1.7W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-VDFN Exposed Pad
Pake Aparèy Founisè : 8-MLP (3x2)