SIZF300DT-T1-GE3 Pricing (USD) [166378PC Stock]
- 1 pcs$0.22231
- Nimewo Pati:
- SIZF300DT-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET DUAL N-CHAN 30V PPAIR 3X3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Zener - Single, Diodes - Rèkteur - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIZF300DT-T1-GE3 electronic components. SIZF300DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF300DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF300DT-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIZF300DT-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET DUAL N-CHAN 30V PPAIR 3X3
Seri :
TrenchFET® Gen IV
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
RD sou (Max) @ Id, Vgs :
4.5 mOhm @ 10A, 10V, 1.84 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 10V, 62nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1100pF @ 15V, 3150pF @ 15V
Pouvwa - Max :
3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerWDFN
Pake Aparèy Founisè :
8-PowerPair® (6x5)
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