IXTP02N50D Pricing (USD) [24888PC Stock]
- 1 pcs$1.83061
- 50 pcs$1.82150
- Nimewo Pati:
- IXTP02N50D
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 500V 0.2A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - RF, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXTP02N50D electronic components. IXTP02N50D can be shipped within 24 hours after order. If you have any demands for IXTP02N50D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP02N50D Atribi pwodwi yo
Nimewo Pati :
IXTP02N50D
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 500V 0.2A TO-220
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
30 Ohm @ 50mA, 0V
Vgs (th) (Max) @ Id :
5V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
120pF @ 25V
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
1.1W (Ta), 25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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