IRF9Z10 Pricing (USD) [54709PC Stock]
- 1 pcs$0.71827
- 1,000 pcs$0.71470
- Nimewo Pati:
- IRF9Z10
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 60V 6.7A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRF9Z10 electronic components. IRF9Z10 can be shipped within 24 hours after order. If you have any demands for IRF9Z10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF9Z10 Atribi pwodwi yo
Nimewo Pati :
IRF9Z10
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 60V 6.7A TO220AB
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
500 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
270pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
43W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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