[13921PC Stock]
- Nimewo Pati:
- ZXMN6A08E6TC
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 60V 2.8A SOT23-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated ZXMN6A08E6TC electronic components. ZXMN6A08E6TC can be shipped within 24 hours after order. If you have any demands for ZXMN6A08E6TC, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN6A08E6TC Atribi pwodwi yo
Nimewo Pati :
ZXMN6A08E6TC
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 60V 2.8A SOT23-6
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
80 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
5.8nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
459pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-26
Pake / Ka :
SOT-23-6
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