Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 100V 3.4A 8SOIC
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
120 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
632pF @ 50V
Disipasyon Pouvwa (Max) :
2.5W (Ta)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOIC
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)