IRFH5210TRPBF Pricing (USD) [138806PC Stock]
- 1 pcs$0.27912
- 4,000 pcs$0.27774
- Nimewo Pati:
- IRFH5210TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 10A 8-PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFH5210TRPBF electronic components. IRFH5210TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH5210TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH5210TRPBF Atribi pwodwi yo
Nimewo Pati :
IRFH5210TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 10A 8-PQFN
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Ta), 55A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
14.9 mOhm @ 33A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
59nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2570pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.6W (Ta), 104W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PQFN (5x6)
Pake / Ka :
8-PowerVDFN
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