PMPB10XNEAX Pricing (USD) [460446PC Stock]
- 1 pcs$0.08033
- Nimewo Pati:
- PMPB10XNEAX
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- PMPB10XNEA/SOT1220/SOT1220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMPB10XNEAX electronic components. PMPB10XNEAX can be shipped within 24 hours after order. If you have any demands for PMPB10XNEAX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMPB10XNEAX Atribi pwodwi yo
Nimewo Pati :
PMPB10XNEAX
Manifakti :
Nexperia USA Inc.
Deskripsyon :
PMPB10XNEA/SOT1220/SOT1220
Seri :
Automotive, AEC-Q101, TrenchMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
14 mOhm @ 9A, 4.5V
Vgs (th) (Max) @ Id :
0.9V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
34nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
2.175nF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.7W (Ta), 12.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN2020MD-6
Pake / Ka :
6-UDFN Exposed Pad
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