Rohm Semiconductor - RQ1E100XNTR

KEY Part #: K6420763

RQ1E100XNTR Pricing (USD) [247410PC Stock]

  • 1 pcs$0.16527
  • 3,000 pcs$0.16445

Nimewo Pati:
RQ1E100XNTR
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MOSFET N-CH 30V 10A TSMT8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Rohm Semiconductor RQ1E100XNTR electronic components. RQ1E100XNTR can be shipped within 24 hours after order. If you have any demands for RQ1E100XNTR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RQ1E100XNTR Atribi pwodwi yo

Nimewo Pati : RQ1E100XNTR
Manifakti : Rohm Semiconductor
Deskripsyon : MOSFET N-CH 30V 10A TSMT8
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 10.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 12.7nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1000pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 550mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TSMT8
Pake / Ka : 8-SMD, Flat Lead