[12569PC Stock]
- Nimewo Pati:
- IRF510S
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 100V 5.6A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRF510S electronic components. IRF510S can be shipped within 24 hours after order. If you have any demands for IRF510S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF510S Atribi pwodwi yo
Nimewo Pati :
IRF510S
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 100V 5.6A D2PAK
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
540 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.3nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
180pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.7W (Ta), 43W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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