PSMN6R0-30YL,115 Pricing (USD) [357223PC Stock]
- 1 pcs$0.10354
- 1,500 pcs$0.09607
- Nimewo Pati:
- PSMN6R0-30YL,115
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 30V 79A LFPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Tiristors - SCR, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Diodes - RF and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PSMN6R0-30YL,115 electronic components. PSMN6R0-30YL,115 can be shipped within 24 hours after order. If you have any demands for PSMN6R0-30YL,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN6R0-30YL,115 Atribi pwodwi yo
Nimewo Pati :
PSMN6R0-30YL,115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 30V 79A LFPAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
79A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.15V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1425pF @ 12V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
55W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
LFPAK56, Power-SO8
Pake / Ka :
SC-100, SOT-669
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