Infineon Technologies - IRG6S320UTRRPBF

KEY Part #: K6423836

[9516PC Stock]


    Nimewo Pati:
    IRG6S320UTRRPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    IGBT 330V 50A 114W D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays and Diodes - Zener - Arrays ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRG6S320UTRRPBF electronic components. IRG6S320UTRRPBF can be shipped within 24 hours after order. If you have any demands for IRG6S320UTRRPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRG6S320UTRRPBF Atribi pwodwi yo

    Nimewo Pati : IRG6S320UTRRPBF
    Manifakti : Infineon Technologies
    Deskripsyon : IGBT 330V 50A 114W D2PAK
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : Trench
    Voltage - Pèseptè ki emèt deba (Max) : 330V
    Kouran - Pèseptè (Ic) (Max) : 50A
    Kouran - Pèseptè batman (Icm) : -
    Vce (sou) (Max) @ Vge, Ic : 1.65V @ 15V, 24A
    Pouvwa - Max : 114W
    Oblije chanje enèji : -
    Kalite Antre : Standard
    Gate chaje : 46nC
    Td (on / off) @ 25 ° C : 24ns/89ns
    Kondisyon egzamen an : 196V, 12A, 10 Ohm
    Ranvèse Tan Reverse (trr) : -
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Pake Aparèy Founisè : D2PAK