[9325PC Stock]
- Nimewo Pati:
- STGB3NB60SDT4
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- IGBT 600V 6A 70W D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGB3NB60SDT4 electronic components. STGB3NB60SDT4 can be shipped within 24 hours after order. If you have any demands for STGB3NB60SDT4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGB3NB60SDT4 Atribi pwodwi yo
Nimewo Pati :
STGB3NB60SDT4
Manifakti :
STMicroelectronics
Deskripsyon :
IGBT 600V 6A 70W D2PAK
Seri :
PowerMESH™
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
6A
Kouran - Pèseptè batman (Icm) :
25A
Vce (sou) (Max) @ Vge, Ic :
1.5V @ 15V, 3A
Pouvwa - Max :
70W
Oblije chanje enèji :
1.15mJ (off)
Kalite Antre :
Standard
Gate chaje :
18nC
Td (on / off) @ 25 ° C :
125ns/3.4µs
Kondisyon egzamen an :
480V, 3A, 1 kOhm, 15V
Ranvèse Tan Reverse (trr) :
1.7µs
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
D2PAK
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