Infineon Technologies - IRG8P15N120KD-EPBF

KEY Part #: K6423296

[9702PC Stock]


    Nimewo Pati:
    IRG8P15N120KD-EPBF
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    IGBT 1200V 30A 125W TO-247AD.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - JFETs, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF and Modil pouvwa chofè ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IRG8P15N120KD-EPBF electronic components. IRG8P15N120KD-EPBF can be shipped within 24 hours after order. If you have any demands for IRG8P15N120KD-EPBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRG8P15N120KD-EPBF Atribi pwodwi yo

    Nimewo Pati : IRG8P15N120KD-EPBF
    Manifakti : Infineon Technologies
    Deskripsyon : IGBT 1200V 30A 125W TO-247AD
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : -
    Voltage - Pèseptè ki emèt deba (Max) : 1200V
    Kouran - Pèseptè (Ic) (Max) : 30A
    Kouran - Pèseptè batman (Icm) : 30A
    Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 10A
    Pouvwa - Max : 125W
    Oblije chanje enèji : 600µJ (on), 600µJ (off)
    Kalite Antre : Standard
    Gate chaje : 98nC
    Td (on / off) @ 25 ° C : 15ns/170ns
    Kondisyon egzamen an : 600V, 10A, 10 Ohm, 15V
    Ranvèse Tan Reverse (trr) : 60ns
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-247-3
    Pake Aparèy Founisè : TO-247AD