RW1A030APT2CR Pricing (USD) [838004PC Stock]
- 1 pcs$0.04879
- 8,000 pcs$0.04855
- Nimewo Pati:
- RW1A030APT2CR
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 12V 3A WEMT6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RW1A030APT2CR electronic components. RW1A030APT2CR can be shipped within 24 hours after order. If you have any demands for RW1A030APT2CR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RW1A030APT2CR Atribi pwodwi yo
Nimewo Pati :
RW1A030APT2CR
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET P-CH 12V 3A WEMT6
Seri :
-
Estati Pati :
Not For New Designs
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
42 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 4.5V
Vgs (Max) :
-8V
Antre kapasite (Ciss) (Max) @ Vds :
2700pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
700mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-WEMT
Pake / Ka :
SOT-563, SOT-666
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