Vishay Siliconix - IRFBC30ASTRR

KEY Part #: K6414387

[12772PC Stock]


    Nimewo Pati:
    IRFBC30ASTRR
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 600V 3.6A D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays and Tiristors - TRIACs ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix IRFBC30ASTRR electronic components. IRFBC30ASTRR can be shipped within 24 hours after order. If you have any demands for IRFBC30ASTRR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFBC30ASTRR Atribi pwodwi yo

    Nimewo Pati : IRFBC30ASTRR
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 600V 3.6A D2PAK
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 600V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.6A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 2.2 Ohm @ 2.2A, 10V
    Vgs (th) (Max) @ Id : 4.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 23nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 510pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 74W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D2PAK
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB