Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET 2N-CH 30V 1A TSMT6
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A
RD sou (Max) @ Id, Vgs :
238 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
2.4nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
77pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
TSMT6 (SC-95)