Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 4P-CH 30V 0.6A 14DIP
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
600mA
RD sou (Max) @ Id, Vgs :
2 Ohm @ 1A, 12V
Vgs (th) (Max) @ Id :
4.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
150pF @ 15V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
14-DIP