SQJB80EP-T1_GE3 Pricing (USD) [164478PC Stock]
- 1 pcs$0.22488
- 3,000 pcs$0.19003
- Nimewo Pati:
- SQJB80EP-T1_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2 N-CH 80V POWERPAK SO8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQJB80EP-T1_GE3 electronic components. SQJB80EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJB80EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJB80EP-T1_GE3 Atribi pwodwi yo
Nimewo Pati :
SQJB80EP-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2 N-CH 80V POWERPAK SO8
Seri :
Automotive, AEC-Q101, TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30A (Tc)
RD sou (Max) @ Id, Vgs :
19 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
32nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1400pF @ 25V
Pouvwa - Max :
48W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® SO-8 Dual
Pake Aparèy Founisè :
PowerPAK® SO-8 Dual
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