IXYS - IXFP60N25X3

KEY Part #: K6398216

IXFP60N25X3 Pricing (USD) [14986PC Stock]

  • 1 pcs$3.02761
  • 10 pcs$2.70281
  • 100 pcs$2.21615
  • 500 pcs$1.79452
  • 1,000 pcs$1.51345

Nimewo Pati:
IXFP60N25X3
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 250V 60A TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - IGBTs - Arrays, Tiristors - TRIACs, Diodes - Rèkteur - Single, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in IXYS IXFP60N25X3 electronic components. IXFP60N25X3 can be shipped within 24 hours after order. If you have any demands for IXFP60N25X3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFP60N25X3 Atribi pwodwi yo

Nimewo Pati : IXFP60N25X3
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 250V 60A TO220AB
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 23 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3610pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 320W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB (IXFP)
Pake / Ka : TO-220-3