SGB15N120ATMA1 Pricing (USD) [32036PC Stock]
- 1 pcs$1.28646
- 1,000 pcs$0.99910
- Nimewo Pati:
- SGB15N120ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 1200V 30A 198W TO263-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies SGB15N120ATMA1 electronic components. SGB15N120ATMA1 can be shipped within 24 hours after order. If you have any demands for SGB15N120ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SGB15N120ATMA1 Atribi pwodwi yo
Nimewo Pati :
SGB15N120ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 1200V 30A 198W TO263-3
Seri :
-
Estati Pati :
Not For New Designs
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
30A
Kouran - Pèseptè batman (Icm) :
52A
Vce (sou) (Max) @ Vge, Ic :
3.6V @ 15V, 15A
Pouvwa - Max :
198W
Oblije chanje enèji :
1.9mJ
Kalite Antre :
Standard
Gate chaje :
130nC
Td (on / off) @ 25 ° C :
18ns/580ns
Kondisyon egzamen an :
800V, 15A, 33 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
PG-TO263-3
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