VS-HFA08TB120-N3 Pricing (USD) [7405PC Stock]
- 1,000 pcs$1.00470
- Nimewo Pati:
- VS-HFA08TB120-N3
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 1.2KV 8A TO220AC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Tiristors - SCR, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division VS-HFA08TB120-N3 electronic components. VS-HFA08TB120-N3 can be shipped within 24 hours after order. If you have any demands for VS-HFA08TB120-N3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-HFA08TB120-N3 Atribi pwodwi yo
Nimewo Pati :
VS-HFA08TB120-N3
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 1.2KV 8A TO220AC
Seri :
HEXFRED®
Estati Pati :
Obsolete
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
3.3V @ 8A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
95ns
Kouran - Fèy Reverse @ Vr :
10µA @ 1200V
Kapasite @ Vr, F :
-
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-2
Pake Aparèy Founisè :
TO-220AC
Operating Tanperati - Junction :
-55°C ~ 150°C
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