Nimewo Pati :
STGW10M65DF2
Manifakti :
STMicroelectronics
Deskripsyon :
TRENCH GATE FIELD-STOP IGBT M SE
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
20A
Kouran - Pèseptè batman (Icm) :
40A
Vce (sou) (Max) @ Vge, Ic :
2V @ 15V, 10A
Oblije chanje enèji :
120µJ (on), 270µJ (off)
Td (on / off) @ 25 ° C :
19ns/91ns
Kondisyon egzamen an :
400V, 10A, 22 Ohm, 15V
Ranvèse Tan Reverse (trr) :
96ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247