IXYS - IXGP12N100AU1

KEY Part #: K6424006

IXGP12N100AU1 Pricing (USD) [9458PC Stock]

  • 50 pcs$2.03965

Nimewo Pati:
IXGP12N100AU1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 1000V 24A 100W TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Diodes - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in IXYS IXGP12N100AU1 electronic components. IXGP12N100AU1 can be shipped within 24 hours after order. If you have any demands for IXGP12N100AU1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXGP12N100AU1 Atribi pwodwi yo

Nimewo Pati : IXGP12N100AU1
Manifakti : IXYS
Deskripsyon : IGBT 1000V 24A 100W TO220AB
Seri : -
Estati Pati : Obsolete
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 1000V
Kouran - Pèseptè (Ic) (Max) : 24A
Kouran - Pèseptè batman (Icm) : 48A
Vce (sou) (Max) @ Vge, Ic : 4V @ 15V, 12A
Pouvwa - Max : 100W
Oblije chanje enèji : 4mJ (off)
Kalite Antre : Standard
Gate chaje : 65nC
Td (on / off) @ 25 ° C : 100ns/850ns
Kondisyon egzamen an : 800V, 12A, 120 Ohm, 15V
Ranvèse Tan Reverse (trr) : 60ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB