IXGT32N90B2D1 Pricing (USD) [14481PC Stock]
- 1 pcs$2.99624
- 30 pcs$2.98134
- Nimewo Pati:
- IXGT32N90B2D1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 900V 64A 300W TO268.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXGT32N90B2D1 electronic components. IXGT32N90B2D1 can be shipped within 24 hours after order. If you have any demands for IXGT32N90B2D1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXGT32N90B2D1 Atribi pwodwi yo
Nimewo Pati :
IXGT32N90B2D1
Manifakti :
IXYS
Deskripsyon :
IGBT 900V 64A 300W TO268
Seri :
HiPerFAST™
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
900V
Kouran - Pèseptè (Ic) (Max) :
64A
Kouran - Pèseptè batman (Icm) :
200A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 32A
Pouvwa - Max :
300W
Oblije chanje enèji :
2.2mJ (off)
Kalite Antre :
Standard
Gate chaje :
89nC
Td (on / off) @ 25 ° C :
20ns/260ns
Kondisyon egzamen an :
720V, 32A, 5 Ohm, 15V
Ranvèse Tan Reverse (trr) :
190ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Pake Aparèy Founisè :
TO-268
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