ON Semiconductor - FGA25N120FTD

KEY Part #: K6424106

[9423PC Stock]


    Nimewo Pati:
    FGA25N120FTD
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    IGBT 1200V 50A 313W TO3P.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Zener - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FGA25N120FTD electronic components. FGA25N120FTD can be shipped within 24 hours after order. If you have any demands for FGA25N120FTD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FGA25N120FTD Atribi pwodwi yo

    Nimewo Pati : FGA25N120FTD
    Manifakti : ON Semiconductor
    Deskripsyon : IGBT 1200V 50A 313W TO3P
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : Trench Field Stop
    Voltage - Pèseptè ki emèt deba (Max) : 1200V
    Kouran - Pèseptè (Ic) (Max) : 50A
    Kouran - Pèseptè batman (Icm) : 75A
    Vce (sou) (Max) @ Vge, Ic : 2V @ 15V, 25A
    Pouvwa - Max : 313W
    Oblije chanje enèji : 340µJ (on), 900µJ (off)
    Kalite Antre : Standard
    Gate chaje : 160nC
    Td (on / off) @ 25 ° C : 48ns/210ns
    Kondisyon egzamen an : 600V, 25A, 15 Ohm, 15V
    Ranvèse Tan Reverse (trr) : 770ns
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-3P-3, SC-65-3
    Pake Aparèy Founisè : TO-3P