HGTP5N120BND Pricing (USD) [56538PC Stock]
- 1 pcs$0.69158
- 800 pcs$0.67146
- Nimewo Pati:
- HGTP5N120BND
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- IGBT 1200V 21A 167W TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Modil pouvwa chofè, Transistors - JFETs, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Tiristors - SCR, Transistors - Pwogramasyon Unijunction and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor HGTP5N120BND electronic components. HGTP5N120BND can be shipped within 24 hours after order. If you have any demands for HGTP5N120BND, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGTP5N120BND Atribi pwodwi yo
Nimewo Pati :
HGTP5N120BND
Manifakti :
ON Semiconductor
Deskripsyon :
IGBT 1200V 21A 167W TO220AB
Seri :
-
Estati Pati :
Not For New Designs
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
21A
Kouran - Pèseptè batman (Icm) :
40A
Vce (sou) (Max) @ Vge, Ic :
2.7V @ 15V, 5A
Pouvwa - Max :
167W
Oblije chanje enèji :
450µJ (on), 390µJ (off)
Kalite Antre :
Standard
Gate chaje :
53nC
Td (on / off) @ 25 ° C :
22ns/160ns
Kondisyon egzamen an :
960V, 5A, 25 Ohm, 15V
Ranvèse Tan Reverse (trr) :
65ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-3
Pake Aparèy Founisè :
TO-220-3
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