IPW60R090CFD7XKSA1 Pricing (USD) [11588PC Stock]
- 1 pcs$3.55645
- Nimewo Pati:
- IPW60R090CFD7XKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- HIGH POWERNEW.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Modil pouvwa chofè, Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPW60R090CFD7XKSA1 electronic components. IPW60R090CFD7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPW60R090CFD7XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPW60R090CFD7XKSA1 Atribi pwodwi yo
Nimewo Pati :
IPW60R090CFD7XKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
HIGH POWERNEW
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
25A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
90 mOhm @ 11.4A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 570µA
Chaje Gate (Qg) (Max) @ Vgs :
51nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2103pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO247-3
Pake / Ka :
TO-247-3
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