STMicroelectronics - STGB10H60DF

KEY Part #: K6423175

STGB10H60DF Pricing (USD) [70013PC Stock]

  • 1 pcs$0.55848
  • 1,000 pcs$0.49651
  • 2,000 pcs$0.46227

Nimewo Pati:
STGB10H60DF
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 600V 20A 115W D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Diodes - Bridge rèktifikateur and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGB10H60DF electronic components. STGB10H60DF can be shipped within 24 hours after order. If you have any demands for STGB10H60DF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGB10H60DF Atribi pwodwi yo

Nimewo Pati : STGB10H60DF
Manifakti : STMicroelectronics
Deskripsyon : IGBT 600V 20A 115W D2PAK
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 20A
Kouran - Pèseptè batman (Icm) : 40A
Vce (sou) (Max) @ Vge, Ic : 1.95V @ 15V, 10A
Pouvwa - Max : 115W
Oblije chanje enèji : 83µJ (on), 140µJ (off)
Kalite Antre : Standard
Gate chaje : 57nC
Td (on / off) @ 25 ° C : 19.5ns/103ns
Kondisyon egzamen an : 400V, 10A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 107ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : D2PAK