STGB10H60DF Pricing (USD) [70013PC Stock]
- 1 pcs$0.55848
- 1,000 pcs$0.49651
- 2,000 pcs$0.46227
- Nimewo Pati:
- STGB10H60DF
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- IGBT 600V 20A 115W D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGB10H60DF electronic components. STGB10H60DF can be shipped within 24 hours after order. If you have any demands for STGB10H60DF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGB10H60DF Atribi pwodwi yo
Nimewo Pati :
STGB10H60DF
Manifakti :
STMicroelectronics
Deskripsyon :
IGBT 600V 20A 115W D2PAK
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
20A
Kouran - Pèseptè batman (Icm) :
40A
Vce (sou) (Max) @ Vge, Ic :
1.95V @ 15V, 10A
Pouvwa - Max :
115W
Oblije chanje enèji :
83µJ (on), 140µJ (off)
Kalite Antre :
Standard
Gate chaje :
57nC
Td (on / off) @ 25 ° C :
19.5ns/103ns
Kondisyon egzamen an :
400V, 10A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) :
107ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
D2PAK
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