APT20GN60BDQ1G Pricing (USD) [25506PC Stock]
- 1 pcs$1.62395
- 150 pcs$1.61587
- Nimewo Pati:
- APT20GN60BDQ1G
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- IGBT 600V 40A 136W TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT20GN60BDQ1G electronic components. APT20GN60BDQ1G can be shipped within 24 hours after order. If you have any demands for APT20GN60BDQ1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT20GN60BDQ1G Atribi pwodwi yo
Nimewo Pati :
APT20GN60BDQ1G
Manifakti :
Microsemi Corporation
Deskripsyon :
IGBT 600V 40A 136W TO247
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
40A
Kouran - Pèseptè batman (Icm) :
60A
Vce (sou) (Max) @ Vge, Ic :
1.9V @ 15V, 20A
Pouvwa - Max :
136W
Oblije chanje enèji :
230µJ (on), 580µJ (off)
Kalite Antre :
Standard
Gate chaje :
120nC
Td (on / off) @ 25 ° C :
9ns/140ns
Kondisyon egzamen an :
400V, 20A, 4.3 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247 [B]
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