TK10V60W,LVQ Pricing (USD) [60727PC Stock]
- 1 pcs$0.67621
- 2,500 pcs$0.67285
- Nimewo Pati:
- TK10V60W,LVQ
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 600V 9.7A 5DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK10V60W,LVQ electronic components. TK10V60W,LVQ can be shipped within 24 hours after order. If you have any demands for TK10V60W,LVQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK10V60W,LVQ Atribi pwodwi yo
Nimewo Pati :
TK10V60W,LVQ
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 600V 9.7A 5DFN
Seri :
DTMOSIV
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
380 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
700pF @ 300V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
88.3W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
4-DFN-EP (8x8)
Pake / Ka :
4-VSFN Exposed Pad
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