BSC018NE2LSATMA1 Pricing (USD) [164965PC Stock]
- 1 pcs$0.22421
- 5,000 pcs$0.21525
- Nimewo Pati:
- BSC018NE2LSATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 25V 100A TDSON-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSC018NE2LSATMA1 electronic components. BSC018NE2LSATMA1 can be shipped within 24 hours after order. If you have any demands for BSC018NE2LSATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC018NE2LSATMA1 Atribi pwodwi yo
Nimewo Pati :
BSC018NE2LSATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 25V 100A TDSON-8
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
29A (Ta), 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.8 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2800pF @ 12V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Ta), 69W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TDSON-8
Pake / Ka :
8-PowerTDFN
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