IRFH8316TRPBF Pricing (USD) [244308PC Stock]
- 1 pcs$0.15140
- 4,000 pcs$0.14534
- Nimewo Pati:
- IRFH8316TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 27A PQFN5X6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Zener - Single, Diodes - RF, Diodes - Rèkteur - Arrays, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFH8316TRPBF electronic components. IRFH8316TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH8316TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH8316TRPBF Atribi pwodwi yo
Nimewo Pati :
IRFH8316TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 27A PQFN5X6
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
27A (Ta), 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.95 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs :
59nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3610pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.6W (Ta), 59W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PQFN (5x6)
Pake / Ka :
8-PowerTDFN
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