Toshiba Semiconductor and Storage - TK3R1P04PL,RQ

KEY Part #: K6403195

TK3R1P04PL,RQ Pricing (USD) [173959PC Stock]

  • 1 pcs$0.21262

Nimewo Pati:
TK3R1P04PL,RQ
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CHANNEL 40V 58A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK3R1P04PL,RQ electronic components. TK3R1P04PL,RQ can be shipped within 24 hours after order. If you have any demands for TK3R1P04PL,RQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK3R1P04PL,RQ Atribi pwodwi yo

Nimewo Pati : TK3R1P04PL,RQ
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CHANNEL 40V 58A DPAK
Seri : U-MOSIX-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 58A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 3.1 mOhm @ 29A, 10V
Vgs (th) (Max) @ Id : 2.4V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4670pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 87W (Tc)
Operating Tanperati : 175°C
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63