Infineon Technologies - IGW50N65H5AXKSA1

KEY Part #: K6424750

IGW50N65H5AXKSA1 Pricing (USD) [19357PC Stock]

  • 1 pcs$2.12910
  • 240 pcs$2.11600

Nimewo Pati:
IGW50N65H5AXKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 650V TO247-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IGW50N65H5AXKSA1 Atribi pwodwi yo

Nimewo Pati : IGW50N65H5AXKSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 650V TO247-3
Seri : Automotive, AEC-Q101, TrenchStop™
Estati Pati : Not For New Designs
Kalite IGBT : Trench
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 80A
Kouran - Pèseptè batman (Icm) : 150A
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 50A
Pouvwa - Max : 270W
Oblije chanje enèji : 450µJ (on), 160µJ (off)
Kalite Antre : Standard
Gate chaje : 116nC
Td (on / off) @ 25 ° C : 21ns/173ns
Kondisyon egzamen an : 400V, 25A, 12 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : PG-TO247-3