IXGR55N120A3H1 Pricing (USD) [6594PC Stock]
- 1 pcs$6.57963
- 30 pcs$6.54689
- Nimewo Pati:
- IXGR55N120A3H1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 1200V 70A 200W ISOPLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Transistors - Objektif espesyal and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in IXYS IXGR55N120A3H1 electronic components. IXGR55N120A3H1 can be shipped within 24 hours after order. If you have any demands for IXGR55N120A3H1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXGR55N120A3H1 Atribi pwodwi yo
Nimewo Pati :
IXGR55N120A3H1
Manifakti :
IXYS
Deskripsyon :
IGBT 1200V 70A 200W ISOPLUS247
Seri :
GenX3™
Estati Pati :
Active
Kalite IGBT :
PT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
70A
Kouran - Pèseptè batman (Icm) :
330A
Vce (sou) (Max) @ Vge, Ic :
2.35V @ 15V, 55A
Pouvwa - Max :
200W
Oblije chanje enèji :
5.1mJ (on), 13.3mJ (off)
Kalite Antre :
Standard
Gate chaje :
185nC
Td (on / off) @ 25 ° C :
23ns/365ns
Kondisyon egzamen an :
960V, 55A, 3 Ohm, 15V
Ranvèse Tan Reverse (trr) :
200ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
ISOPLUS247™
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