STMicroelectronics - STGW30NC60VD

KEY Part #: K6421846

STGW30NC60VD Pricing (USD) [34615PC Stock]

  • 1 pcs$1.19657
  • 600 pcs$1.19062

Nimewo Pati:
STGW30NC60VD
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IGBT 600V 80A 250W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Diodes - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Tiristors - SCR and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in STMicroelectronics STGW30NC60VD electronic components. STGW30NC60VD can be shipped within 24 hours after order. If you have any demands for STGW30NC60VD, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGW30NC60VD Atribi pwodwi yo

Nimewo Pati : STGW30NC60VD
Manifakti : STMicroelectronics
Deskripsyon : IGBT 600V 80A 250W TO247
Seri : PowerMESH™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 80A
Kouran - Pèseptè batman (Icm) : 150A
Vce (sou) (Max) @ Vge, Ic : 2.5V @ 15V, 20A
Pouvwa - Max : 250W
Oblije chanje enèji : 220µJ (on), 330µJ (off)
Kalite Antre : Standard
Gate chaje : 100nC
Td (on / off) @ 25 ° C : 31ns/100ns
Kondisyon egzamen an : 390V, 20A, 3.3 Ohm, 15V
Ranvèse Tan Reverse (trr) : 44ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247-3