[13873PC Stock]
- Nimewo Pati:
- TPCF8A01(TE85L)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 20V 3A VS-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPCF8A01(TE85L) electronic components. TPCF8A01(TE85L) can be shipped within 24 hours after order. If you have any demands for TPCF8A01(TE85L), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPCF8A01(TE85L) Atribi pwodwi yo
Nimewo Pati :
TPCF8A01(TE85L)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 20V 3A VS-8
Seri :
U-MOSIII
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2V, 4.5V
RD sou (Max) @ Id, Vgs :
49 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs :
7.5nC @ 5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
590pF @ 10V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
330mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
VS-8 (2.9x1.5)
Pake / Ka :
8-SMD, Flat Lead
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