FDMT800100DC Pricing (USD) [26159PC Stock]
- 1 pcs$1.58338
- 3,000 pcs$1.57550
- Nimewo Pati:
- FDMT800100DC
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 100V 24A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Diodes - Zener - Single and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDMT800100DC electronic components. FDMT800100DC can be shipped within 24 hours after order. If you have any demands for FDMT800100DC, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDMT800100DC Atribi pwodwi yo
Nimewo Pati :
FDMT800100DC
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 100V 24A
Seri :
Dual Cool™, PowerTrench®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
24A (Ta), 162A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
2.95 mOhm @ 24A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
111nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7835pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.2W (Ta), 156W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-Dual Cool™88
Pake / Ka :
8-PowerVDFN
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