Vishay Semiconductor Diodes Division - BAL99-HE3-18

KEY Part #: K6458613

BAL99-HE3-18 Pricing (USD) [3181000PC Stock]

  • 1 pcs$0.01227
  • 10,000 pcs$0.01221

Nimewo Pati:
BAL99-HE3-18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 70V 250MA SOT23. Diodes - General Purpose, Power, Switching 70 Volt 450mA 6ns 250 mA IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Tiristors - SCR, Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs, Diodes - RF and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAL99-HE3-18 electronic components. BAL99-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAL99-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAL99-HE3-18 Atribi pwodwi yo

Nimewo Pati : BAL99-HE3-18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 70V 250MA SOT23
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 70V
Kouran - Mwayèn Rèktifye (Io) : 250mA
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 150mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 6ns
Kouran - Fèy Reverse @ Vr : 2.5µA @ 70V
Kapasite @ Vr, F : 1.5pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè : SOT-23
Operating Tanperati - Junction : -55°C ~ 150°C

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