STMicroelectronics - STH300NH02L-6

KEY Part #: K6393809

STH300NH02L-6 Pricing (USD) [40976PC Stock]

  • 1 pcs$0.95899
  • 1,000 pcs$0.95422

Nimewo Pati:
STH300NH02L-6
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 24V 180A H2PAK-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STH300NH02L-6 Atribi pwodwi yo

Nimewo Pati : STH300NH02L-6
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 24V 180A H2PAK-6
Seri : Automotive, AEC-Q101, STripFET™ III
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 24V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V
RD sou (Max) @ Id, Vgs : 1.2 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 109nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 7050pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : H²PAK
Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab)