[12345PC Stock]
- Nimewo Pati:
- STB12NM60N-1
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 600V 10A I2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STB12NM60N-1 electronic components. STB12NM60N-1 can be shipped within 24 hours after order. If you have any demands for STB12NM60N-1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB12NM60N-1 Atribi pwodwi yo
Nimewo Pati :
STB12NM60N-1
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 600V 10A I2PAK
Seri :
MDmesh™ II
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
410 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
30.5nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
960pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
90W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I2PAK
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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