Microsemi Corporation - APTM120DDA57T3G

KEY Part #: K6524308

[3875PC Stock]


    Nimewo Pati:
    APTM120DDA57T3G
    Manifakti:
    Microsemi Corporation
    Detaye deskripsyon:
    MOSFET 2N-CH 1200V 17A SP3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo and Tiristors - SCR - Modil yo ...
    Avantaj konpetitif:
    We specialize in Microsemi Corporation APTM120DDA57T3G electronic components. APTM120DDA57T3G can be shipped within 24 hours after order. If you have any demands for APTM120DDA57T3G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APTM120DDA57T3G Atribi pwodwi yo

    Nimewo Pati : APTM120DDA57T3G
    Manifakti : Microsemi Corporation
    Deskripsyon : MOSFET 2N-CH 1200V 17A SP3
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Standard
    Drenaj nan Voltage Sous (Vdss) : 1200V (1.2kV)
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A
    RD sou (Max) @ Id, Vgs : 684 mOhm @ 8.5A, 10V
    Vgs (th) (Max) @ Id : 5V @ 2.5mA
    Chaje Gate (Qg) (Max) @ Vgs : 187nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 5155pF @ 25V
    Pouvwa - Max : 390W
    Operating Tanperati : -40°C ~ 150°C (TJ)
    Mounting Kalite : Chassis Mount
    Pake / Ka : SP3
    Pake Aparèy Founisè : SP3