[8528PC Stock]
- Nimewo Pati:
- 2SK2315TYTR-E
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET N-CH 60V 2A 4-UPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Modil pouvwa chofè and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America 2SK2315TYTR-E electronic components. 2SK2315TYTR-E can be shipped within 24 hours after order. If you have any demands for 2SK2315TYTR-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK2315TYTR-E Atribi pwodwi yo
Nimewo Pati :
2SK2315TYTR-E
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET N-CH 60V 2A 4-UPAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
3V, 4V
RD sou (Max) @ Id, Vgs :
450 mOhm @ 1A, 4V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
173pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
UPAK
Pake / Ka :
TO-243AA
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