Vishay Semiconductor Diodes Division - MURS160HE3_A/H

KEY Part #: K6446861

MURS160HE3_A/H Pricing (USD) [349861PC Stock]

  • 1 pcs$0.10572
  • 3,000 pcs$0.07081

Nimewo Pati:
MURS160HE3_A/H
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 2A DO214AA. Rectifiers 1A,600V,50ns SMB, UF Rect, SMD
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division MURS160HE3_A/H electronic components. MURS160HE3_A/H can be shipped within 24 hours after order. If you have any demands for MURS160HE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MURS160HE3_A/H Atribi pwodwi yo

Nimewo Pati : MURS160HE3_A/H
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 2A DO214AA
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 75ns
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -65°C ~ 175°C

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