IXFX30N110P Pricing (USD) [3957PC Stock]
- 1 pcs$12.65297
- 30 pcs$12.59002
- Nimewo Pati:
- IXFX30N110P
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 1100V 30A PLUS247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Diodes - RF, Transistors - FETs, MOSFETs - Single and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in IXYS IXFX30N110P electronic components. IXFX30N110P can be shipped within 24 hours after order. If you have any demands for IXFX30N110P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX30N110P Atribi pwodwi yo
Nimewo Pati :
IXFX30N110P
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 1100V 30A PLUS247
Seri :
HiPerFET™, PolarP2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
360 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
6.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
235nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
13600pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
960W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PLUS247™-3
Pake / Ka :
TO-247-3
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